Taiwanese chip giant to repurpose Hsinchu fab due to rising price pressure from Chinese rivals According to various reports,Taiwanese chip giant TSMC will wind down its GaN wafer foundry services by ...

Nexperia has introduced what are believed to be the industry’s first ESD diodes designed to protect 48 V automotive data ...

Infineon has announced that its scalable GaN manufacturing on 300mm wafers is on track, with first samples available for ...

Renesas Electronics has introduced three new 650V GaN FETs for AI data centres and server power supply systems including the ...

Rohm has released a 100V power MOSFET – RY7P250BM – optimised for hot-swap circuits in 48V power systems used in AI servers ...

ETH Zürich and ANSTO collaboration reveals mechanisms of single event leakage current radiation damage in MOSFETs and JBS diodes The first results have been reported on a collaboration between ETH ...

ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

Navitas' GaN IC portfolio is expected to use Powerchip’s 200mm in Fab 8B, located in Zhunan Science Park, Taiwan. The fab has ...

To support the use of GaN in BMS applications, Innoscience has now introduced a portfolio of VGaN products, and BMS reference ...

Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...